Researchers at Novosibirsk State Technical University have developed a new design and manufacturing technology for vacuum microelectronics. These devices facilitate electron movement through a miniature vacuum channel, offering an alternative to traditional semiconductor components.
The project is being carried out under the Priority-2030 program. The resulting vacuum transistors and diodes are designed to withstand high radiation levels, extreme temperatures, and significant thermal fluctuations, making them suitable for space and defense applications.
The university has already produced a functional prototype featuring a vertical vacuum channel. These components are characterized by low threshold voltage and a simplified construction, which could enable the development of high-speed, high-frequency radio and radar systems.
The research team is currently expanding the technology to include vacuum components with nanoscale gaps and nanoantennas for the terahertz range. The university has filed a patent application with Rospatent to secure the intellectual property rights for this manufacturing method.
