ASML, TSMC, and the research institute imec have successfully demonstrated the production of complementary transistors using 2D materials. The project utilized standard 300mm wafers and ASML’s single-patterning extreme ultraviolet lithography.
The researchers achieved a 94% yield for the transistors, which were fabricated with a contacted poly pitch of 50 nanometers. The n-type devices utilized molybdenum disulfide, while p-type devices relied on tungsten disulfide or tungsten diselenide.
The results were presented in June 2026 at the IEEE/JSAP Symposium on VLSI Technology and Circuits. Both transistor types demonstrated an Imax/Imin ratio exceeding 10⁵ and maintained low off-currents.
The developed process is back-end-compatible, allowing for potential integration into existing manufacturing flows. While the team considers the approach scalable, further work is required to optimize contact resistance and uniformity for high-volume production.
