Micron Technology has unveiled a product roadmap through 2030, focusing on memory and storage solutions for AI workloads. The company committed to releasing a new generation of high-bandwidth memory (HBM) annually, starting with HBM4 in 2026 and reaching HBM6 by 2030. Custom and vertical HBM (vHBM) options are scheduled for 2028, with vHBM targeting 2 TB/s bandwidth and energy efficiency below 1 picojoule per bit.
The company is also developing GPU-accessible flash storage to allow direct data access for AI systems. In the DRAM sector, Micron plans to begin volume production of its 1-delta node in the second half of 2027, supporting standards like LPDDR6 and HBM5. This node is expected to provide bit density improvements in the mid-20s percent range.
For NAND flash, the G11 generation is slated for volume production in the second half of 2027 with over 400 layers. Micron projects G11 will offer double the bit density of G9, 1.5 times faster I/O speeds, and a reduction in energy consumption of over 25% per data transfer. The firm is also prioritizing 6F-squared architecture and 3D DRAM development.
Micron anticipates tight memory supply conditions through fiscal year 2028. This outlook is supported by strategic customer agreements representing nearly 35% of sales through 2030. The company is shifting its product strategy toward specialized, complex designs, including custom HBM, to meet the specific requirements of high-performance computing and AI hardware.
