ChangXin Technology announced during its third-quarter earnings call that its fifth-generation process platform has reached mass production. This platform currently supports LPDDR5X products in 245Ball and 496Ball packages, offering at least a 50% increase in die yield per wafer compared to the fourth-generation platform.
The company has also completed engineering sample verification for its sixth-generation process platform, which utilizes a 4F² vertical channel DRAM architecture. This architecture employs a bonding and stacking method for logic and memory wafers, alongside proprietary VSG (Vertical Surrounding Gate) transistor technology to facilitate further scaling.
ChangXin plans to begin sampling its first 4F²-based DDR5 RDIMM products by the end of this year. These products will initially target high-value sectors such as servers, with mass production timelines dependent on customer verification progress and market demand.
