Researchers at the Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences have developed a new non-volatile flash memory technology. The design utilizes dielectric films with structural defects, known as electron traps, to capture and retain electrical charges for data storage.
The team transitioned from silicon nitride films to materials with high dielectric constants, specifically aluminum and zirconium oxides. This shift aims to extend data retention periods, lower energy consumption during rewrite cycles, and improve resilience against ionizing radiation. The institute has secured patents for these technical solutions.
Vladimir Gritsenko, a lead researcher at the institute, stated that the electron retention time in these traps could theoretically reach hundreds of years at room temperature. Unlike traditional floating-gate flash memory, the charge is localized directly within the dielectric material, which enhances stability for long-term use.
The technology is intended for space applications, including satellites, spacecraft with nuclear power systems, and orbital data centers. Increased radiation resistance is critical for preventing data corruption caused by high-energy particles during long-duration space missions, allowing for on-orbit data processing.
Beyond charge-based storage, the researchers are investigating alternative methods that rely on changing the material's state rather than accumulating electrical charges. These experimental approaches aim to achieve significantly higher operating speeds and a durability threshold of up to one trillion rewrite cycles.
