Researchers from Concordia University, the National Institute of Scientific Research (INRS), and York University have introduced a new doping method for organic semiconductors called degradation-assisted doping (DAD). This technique aims to overcome the conductivity limitations inherent in traditional doping processes for flexible and wearable electronics.
The DAD method functions by chemically breaking down the dopant molecule after it transfers an electron. Because the degradation products no longer participate in the reaction, they do not hinder the process, allowing additional molecules to continue transferring charge to the semiconductor material efficiently.
In laboratory tests using the organic semiconductor P3HT and the dopant tris(pentafluorophenyl)borane (BCF), the team observed a significant increase in electrical conductivity. Specifically, the number of mobile charge carriers increased by up to 100 times compared to standard methods.
To verify the DAD mechanism, the scientists utilized a combination of nuclear magnetic resonance, optical and electronic spectroscopy, calorimetry, and computer modeling. The experimental data confirmed the theoretical calculations, suggesting that the post-reaction behavior of dopants is critical for performance.
