Researchers from the Rzhanov Institute of Semiconductor Physics (ISP SB RAS) have developed a method for creating high-k dielectric thin films based on hafnium dioxide. The study focuses on integrating these materials into silicon structures to enhance semiconductor performance.
The films are produced using plasma-enhanced atomic layer deposition (PEALD). Researchers then transfer the dielectric layer onto a silicon substrate, creating a buried structure where the hafnium dioxide is isolated by silicon on both sides. This design enables the development of dual-gate transistors with adjustable threshold voltages.
The material exhibits ferroelectric properties, allowing it to retain polarization without an external field. This effect is suitable for creating energy-efficient, high-frequency transistors and non-volatile memory cells. Such memory could potentially offer significantly higher durability than standard flash memory, which is limited to approximately 10,000 write cycles.
The project is currently in the fundamental research stage, with potential future applications in next-generation mobile communications. The work is supported by grants from the Russian Science Foundation (No. 25-19-20049) and the government of the Novosibirsk region (No. 30-2025-000924).
