TSMC plans to begin high-volume manufacturing using High-NA EUV lithography tools in 2030. The company intends to utilize conventional 6x6-inch photomasks for this initial phase.
The roadmap includes the construction of a pilot line in 2031 that will employ 6x12-inch photomasks. TSMC aims to integrate these 6x12-inch systems into advanced node production by 2033.
High-NA EUV tools offer an 8nm single-exposure resolution, compared to the 13nm resolution of current Low-NA systems. However, 6x6-inch masks provide only half the exposure field of existing tools.
TSMC is collaborating with ASML, Intel, and Samsung to transition to 6x12-inch photomasks. This shift requires updates across the entire industry, including EDA software and mask-handling equipment.
The A10 or A11 process technologies, expected around 2030, are considered the primary candidates for the first implementation of High-NA EUV. TSMC confirmed that A12 and A13 nodes will continue using conventional EUV.
