Samsung Electronics has entered into an enhanced strategic partnership with ASML to integrate High-NA EUV lithography into the mass production of DRAM by 2028. This move could make Samsung the first chipmaker to apply this next-generation lithography technology specifically to the DRAM sector.
The High-NA EUV equipment increases the numerical aperture of the lens system from 0.33 to 0.55, enabling the printing of finer patterns with higher resolution. This transition simplifies manufacturing by allowing single-exposure capabilities, which reduces the number of production steps and improves overall efficiency.
The financial investment is significant, as each High-NA EUV tool is priced between $350 million and $400 million. Additionally, Samsung will join an ASML-led initiative to develop 12-inch photomasks, replacing the current 6-inch industry standard. This shift is expected to increase manufacturing productivity by approximately 40%.
While DRAM production is the priority, Samsung plans to implement High-NA EUV for its logic and foundry operations around 2030, coinciding with the reach of 1nm-class process nodes. CEO Young Hyun Jun emphasized that such innovation across the chip value chain is critical for the AI era.
The announcement places pressure on competitors SK Hynix and Micron Technology. While Intel has started limited applications of the technology and TSMC targets a 2030 rollout for advanced nodes, ASML remains the sole global supplier of EUV lithography equipment.
