Samsung Electronics will utilize TSMC's 3nm manufacturing process to produce base dies for Nvidia's next-generation custom high-bandwidth memory (HBM). This marks a shift from Samsung's previous strategy, where the company manufactured both core and base dies for its HBM products internally.
Nvidia has requested that all its HBM suppliers, including Samsung, SK Hynix, and Micron, adopt TSMC's 3nm technology for base dies. Additionally, Nvidia mandates the use of the 1c sixth-generation DRAM process for core dies. These requirements apply to the NVHBM, which is based on the HBM4E architecture announced by Nvidia in August.
The standardization initiative aims to ensure consistent performance across different suppliers and streamline product verification processes. Samsung's Device Solutions division has approved the transition for Nvidia-bound products, although the company will maintain its full-stack production model for standard HBM and custom memory for other clients like AMD.
Samsung continues to develop its internal capabilities for NVHBM production as a contingency measure. The company is currently evaluating whether its own foundries can handle base die manufacturing to mitigate potential supply risks if demand for NVHBM exceeds TSMC's production capacity.
