Nvidia is standardizing its custom high-bandwidth memory, known as NVHBM, by requiring suppliers to use TSMC’s 3nm process technology for base dies. This initiative, announced in August 2026, involves Samsung Electronics, SK Hynix, and Micron.
The NVHBM architecture integrates Nvidia’s memory controller directly into the base die. According to design goals, this configuration aims to provide up to a 30% increase in memory bandwidth and a 15% reduction in power consumption compared to standard HBM4E.
Samsung is collaborating with TSMC on HBM base die manufacturing for the first time, though it intends to maintain some in-house production for other memory products. Micron has confirmed it will outsource both HBM4E and NVHBM base dies to TSMC, targeting volume production by 2027.
SK Hynix, which previously utilized TSMC’s 12nm process for earlier HBM4 base dies, is now prioritizing the 3nm process for future releases. This shift reflects a broader industry trend where memory manufacturers delegate advanced logic production to foundries.
