Samsung Electronics has reportedly completed quality verification for its 12-layer HBM4E high-bandwidth memory with Nvidia and several major cloud service providers. The testing process concluded at the end of September. However, the company has not confirmed these reports, and no supply contracts, order volumes, or mass production timelines have been disclosed.
The HBM4E samples, introduced by Samsung in May, feature a 12-layer stack with a 48GB capacity. The memory offers a standard pin speed of 14Gbps, which can be extended to 16Gbps, resulting in a theoretical bandwidth of up to 4TB/s. Samsung also plans to develop 8-layer 32GB and 16-layer 64GB versions based on customer requirements.
The new memory utilizes the sixth-generation 10nm-class DRAM process and a proprietary 4nm logic base die. Compared to previous generations, these enhancements improve energy efficiency by 16% and reduce thermal resistance by over 14%. While samples were shipped to key clients in May, the company stated that mass production schedules will align with specific customer needs.
