A leaked image of the Qualcomm Snapdragon 8 Elite Extreme Gen 6, model number SM8975, has surfaced on the X platform. The new chip features a larger packaging area compared to its predecessor, the fifth-generation Snapdragon 8 Elite, primarily due to the integration of a new thermal management structure.
The chip adopts a design where the DRAM is moved from the top of the SoC to the side, incorporating a heat sink. This approach mirrors the Heat Path Block (HPB) technology used by Samsung in its Exynos 2600 processor, which utilizes a copper-based block to dissipate heat directly from the application processor.
Industry analysts suggest that relocating the DRAM and adding a heat sink helps reduce heat accumulation between the memory and the SoC. This configuration is intended to allow the CPU and GPU to maintain higher clock speeds for longer durations during operation.
Based on markings found on the chip, such as SM8975 and 101-BC, reports indicate that this version will support LPDDR5X memory. The upcoming Snapdragon summit, where further details on the 2nm chip series are expected, is scheduled to take place from September 22 to 24, 2026.
