Micron has officially unveiled its next-generation NAND flash memory, designated as G11. The company plans to begin mass production of this technology in the second half of 2027. The new architecture features over 400 layers, suggesting that Micron may bypass the G10 generation entirely in its development roadmap.
Compared to the existing 276-layer G9 NAND, the G11 technology offers approximately double the data storage density per unit area. Furthermore, the new memory provides a 1.5x increase in input-output speeds and reduces data transfer energy consumption by more than 25 percent. These improvements are designed to enhance efficiency in large-scale data processing and AI infrastructure.
Looking beyond G11, Micron plans to integrate new materials with high charge carrier mobility into its NAND production. This strategy aims to enable even denser cell architectures and further optimize energy efficiency. The company is also developing specialized NAND solutions for data centers, including SLC-based options for GPU integration and high-bandwidth configurations.
