Intel and SK Hynix are currently in discussions regarding the potential establishment of DRAM production facilities within the United States. This move would mark the first time both companies operate memory manufacturing lines on American soil, aiming to address the rising demand for memory components from hyperscalers and chip designers.
The companies are exploring two primary operational models. The first involves forming a joint venture to share memory IP technology, which could help mitigate global supply chain constraints. Alternatively, SK Hynix may choose to lease a portion of Intel's existing manufacturing facility located in Ohio, allowing the South Korean firm to retain full control over its production output.
While the specific technological focus remains unconfirmed, the potential production scope includes planar DRAM, HBM, and NAND Flash storage solutions. Intel has not commented on these reports but confirmed that its investment plans for the Ohio site remain active. SK Hynix noted that no final decisions have been reached, though it did not dismiss the possibility of a future partnership.
