ASML and its partner ZEISS have outlined the development trajectory for Hyper NA EUV lithography systems. According to a joint publication, these machines will feature a numerical aperture of at least 0.75, enabling an optical resolution of 5nm half-pitch. The companies estimate that this technology will be ready for market introduction in approximately 10 years.
The primary technical hurdle for Hyper NA EUV systems is a significantly reduced depth of focus. Addressing this limitation requires the implementation of thinner photoresists, alongside advancements in wafer flatness, focus control, and overall process management. These improvements are critical to maintaining production viability at such high resolutions.
The companies noted that a 0.75 NA optical system will remain comparable in size to existing High NA EUV equipment, ensuring compatibility with current cleanroom infrastructure. Conversely, increasing the aperture to 0.85 NA would lead to a substantial rise in system volume, reducing its practical appeal. Existing light sources and mask foundations are expected to remain compatible with the new systems.
