SK Hynix is planning a strategic shift in its memory production. The company's 6th generation 10nm-class DRAM process, known as 1c nm, is expected to become its primary memory manufacturing process by early 2027.
The production capacity for 1c nm is projected to grow steadily from 10% of total DRAM capacity in the 2026 Q1 period to 35% by early 2027. During this time, the capacity for the 1b nm process will decrease to 33%, marking a transition in the primary process used.
Industry analysts expect Samsung Electronics and Micron to reach 10nm-class 6th generation DRAM capacity shares of 16% and 19% respectively by the end of the 2026 Q2 period.
The company is currently using 1b nm DRAM dies for HBM4 memory. However, the upcoming HBM4E will be upgraded to 1c nm DRAM dies. Establishing sufficient 1c nm capacity early will facilitate a smooth transition from HBM4 to HBM4E in the market.
