Renesas Electronics has launched its first low-voltage gallium nitride (GaN) power semiconductor series. The new 100V enhancement-mode (E-mode) discrete power transistors are designed for AI data centers, humanoid robotics, factory automation, and industrial motor drives.
The new lineup includes four specific models: RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC, and RTP100E1P2G1FL-DSC. These components offer improved performance metrics, with hard-switching figure of merit (FOM) reduced by up to 35% and soft-switching FOM by up to 63% compared to similar GaN devices.
The devices feature standard MOSFET-compatible packaging, allowing for integration into existing designs without requiring major PCB redesigns. Compared to silicon-based solutions, the new GaN series improves efficiency by 1% to 3% and reduces switching losses by 40% to 70% while eliminating Qrr losses.
This release marks the company's expansion into the low-voltage GaN market. Previously, Renesas focused on depletion-mode SuperGaN technology following its acquisition of Transphorm, which was completed on June 20, 2024. The company also previously released 650V GaN FETs for high-power applications.
