Researchers at the A.V. Rzhanov Institute of Semiconductor Physics (ISP SB RAS) have developed radiation-hardened flash memory chips for space applications. The technology utilizes dielectric films with structural defects, known as traps, which capture and hold electrons to store data.
The team has patented devices based on these films and is now transitioning to materials with high dielectric permittivity, such as aluminum or zirconium oxides. This advancement improves data retention, reduces power consumption during rewriting, and enhances overall radiation resistance.
The technology is intended for use in orbital data centers, interplanetary spacecraft, and systems powered by nuclear engines. Storing and processing data directly in space is expected to reduce the load on communication channels for missions that generate large volumes of information.
The institute is also exploring alternative physical effects for memory, such as atomic displacement to change resistance or polarization. These experimental designs aim to achieve significantly higher speeds and durability, potentially reaching trillions of rewrite cycles.
Scaling the technology to mass production requires substantial investment in manufacturing facilities, lithography equipment for 65 nm nodes and below, and specialized chemical supplies. Experts emphasize that long-term state support and workforce development are critical for industrial implementation.
