Former Intel CEO Patrick Gelsinger has invested in Nagare Labs, a startup developing Z2RAM, a new memory technology designed to combine the density of DRAM, the speed of SRAM, and the scalability of NAND flash.
Z2RAM utilizes oxide semiconductors and 3D stacking, similar to AMD's 3D V-Cache. The technology aims to provide over five times the bit density of SRAM, potentially offering 320 MB in the same space where SRAM currently provides 64 MB.
The architecture uses two transistors per cell, leveraging the gate capacitance of the second transistor for charge storage. This design reduces read latency compared to DRAM while maintaining performance levels comparable to SRAM.
Nagare Labs intends to manufacture Z2RAM using processes similar to NAND production, which the company expects will make it simpler and cheaper to produce than HBM. The startup is currently seeking a manufacturing partner for initial prototypes.
The company aims to produce functional chips within four years and reach mass production within the next decade. Challenges remain regarding the stability of oxide semiconductors and the lack of a standardized interface for integration.
