Hangzhou Jiare Semiconductor has achieved the growth of 12-inch gallium oxide crystals with a constant diameter. This milestone was reached using the company's proprietary SCIENCE series VB crystal growth equipment.
The company emphasizes that achieving a constant diameter is a critical step toward industrialization. This process ensures that crystal ingots have stable, uniform sections suitable for direct cutting and processing, which increases the yield of substrate wafers per ingot and reduces unit costs.
The 12-inch gallium oxide substrates are compatible with standard silicon production lines. This compatibility helps downstream manufacturers minimize equipment investment, reduce line switching costs, and accelerate research and development cycles.
The SCIENCE series equipment features a temperature control precision of plus or minus 0.1 degrees Celsius. The company offers an integrated solution combining hardware and process packages, which enabled the rapid scaling of crystal production from 2 inches to 12 inches.
Earlier this year, in March, Jiare Semiconductor successfully demonstrated the world's first 8-inch gallium oxide homoepitaxial growth. These results were verified by independent third-party organizations both domestically and internationally.
