ASML and its optics partner Carl Zeiss have published a peer-reviewed article detailing the development of the next-generation Hyper NA lithography technology. The new system is expected to arrive in approximately ten years, though a final decision on mass production has not yet been reached.
The Hyper NA technology aims to achieve a resolution of approximately 5 nm, compared to the 8 nm resolution of current High NA EUV systems with a numerical aperture of 0.55. This improvement will allow for the formation of chip features that are roughly 38 percent smaller.
While Intel has already begun utilizing High NA equipment for its 18A process, Samsung and TSMC are scheduled to adopt High NA technology in 2028 and 2030, respectively. Zeiss has already commenced the production of mirrors with the precision required for the upcoming Hyper NA systems.
The physical dimensions of the Hyper NA equipment are expected to be only slightly larger than current High NA systems, which are comparable in size to a double-decker bus. Engineers noted that the current light source used by ASML could potentially be utilized for the new platform without major modifications.
