Researchers at the Tomsk State University of Control Systems and Radioelectronics (TUSUR) have finalized the development and testing of a complete set of four silicon integrated circuits for microwave transceivers. The project utilizes domestic 180 nm CMOS technology, moving away from previous reliance on gallium arsenide-based solutions.
The set includes a low-noise amplifier, a digitally controlled attenuator, a phase shifter, and a buffer amplifier. These components are designed to reduce the size, power consumption, and cost of radio equipment compared to imported alternatives. The university plans to develop a single-chip microwave receiver based on this technology by 2027.
The university is preparing for small-batch production of these chips at the domestic facility JSC Mikron. Several major Russian radio-electronic enterprises, including Almaz-Antey and NIIME, have expressed interest in integrating these components into radar systems, telecommunications, and unmanned aerial vehicle equipment.
