ChangXin Memory Technologies has announced a significant advancement in its 4F² DRAM architecture. Company President Dr. Cao Kanyu confirmed that the firm plans to release its next-generation DDR5 RDIMM products, which incorporate this new architecture, by the end of this year.
The transition from the industry-standard 6F² architecture to 4F² represents a fundamental shift in chip design. While the 6F² architecture uses a single transistor and capacitor per unit, the 4F² design reduces the footprint of each cell to four times the square of the minimum feature size, effectively increasing storage density.
ChangXin has been developing 4F² technology since its inception, securing over 300 patent families. The company published its first paper on the architecture in 2021, followed by additional research in 2023 and 2025. The development process involved optimizing key manufacturing steps, including bit-line formation, word-line metallization, and junction activation.
By targeting the server market with its first 4F²-based DDR5 RDIMM, ChangXin aims to address the high technical and engineering requirements of the sector. While the company has not yet disclosed specific technical specifications or a precise launch date, the product is positioned as a major step in the company's memory technology roadmap.
