At the 2026 World Manufacturing Convention in Hefei, Changxin Technology announced the mass production of its fifth-generation DRAM platform, G5. The platform utilizes quadruple patterning technology with ArF immersion DUV lithography to achieve a memory array active area half-pitch of 11.95 nanometers, matching the manufacturing standards of Samsung's 12-nanometer class nodes.
The G5 platform incorporates new materials and process changes, including a storage capacitor aspect ratio of 45:1 and a high-k metal gate process that reduces the core functional area height to 6,762 nanometers. These advancements increase wafer yield by at least 50% compared to the previous generation, improving both power efficiency and cost control.
Changxin has also launched mass production of 24Gb LPDDR5X memory chips in 496Ball and 245Ball packages for consumer electronics. Additionally, the company introduced its LPDDR6 memory, which features a maximum transfer rate of 12,800 Mbps, a 60% bandwidth increase, and a 20% reduction in power consumption compared to LPDDR5X, with a maximum capacity of 16GB per chip.
The LPDDR6 memory is featured in the Xiaomi 18 Fold, marking the first global commercial deployment of this standard in a flagship smartphone. Furthermore, the Nubia NaviX Ultra smartphone now utilizes Changxin's 10,667 Mbps LPDDR5X chips. Despite these milestones, the company noted that G5 platform products have not yet reached large-scale sales and will not significantly impact short-term financial performance.
