GlobalFoundries has announced the introduction of FDX Fusion, a new semiconductor technology based on fully-depleted silicon-on-insulator architecture. This development marks the company's return to the advanced node segment after a long hiatus.
The company previously halted its 7 nm node development in 2018 due to the high costs and complexity associated with leading-edge manufacturing. Since then, GlobalFoundries focused on specialized semiconductor solutions rather than pursuing smaller transistor sizes.
The new FDX Fusion technology utilizes substrate isolation by creating a fully insulating layer beneath the channel. This approach allows for ultra-low-power in-memory computing and the integration of embedded non-volatile memory like eMRAM.
According to GlobalFoundries, the FDX Fusion platform achieves characteristics comparable to 7 nm-class nodes. The design provides twice the transistor density of the company's first-generation 22FDX node, which was classified as a 22 nm-class technology.
