Chinese memory manufacturer CXMT is reportedly planning to enter the 3D NAND flash market. According to reports, the company is establishing a research and development line for 3D NAND at its second manufacturing facility located near Beijing.
While specific details regarding the architecture, layer count, and production capacity remain undisclosed, CXMT has reportedly initiated discussions with potential clients. One prospective customer intends to utilize these NAND components for storage solutions in AI and supercomputing sectors.
This move signals a potential shift for CXMT, which has traditionally focused on DRAM production. By expanding into NAND, the company aims to become a comprehensive memory supplier, mirroring the business models of industry leaders like Samsung, Micron, and SK hynix.
In the first half of the year, CXMT reported $22,41 billion in revenue and $11,57 billion in net profit. Despite this financial growth, analysts suggest that diversifying into 3D NAND may be driven more by government semiconductor self-sufficiency goals than immediate commercial logic.
The company maintains strong ties to state funding, including support from the China Big Fund and initial backing from the Hefei government, which held a 37% stake during its IPO. These institutional links allow government entities to influence the strategic direction of the manufacturer.
